Electron impact excitation of highly charged Ge-Like Xe ion

被引：0

作者：

Bharti, S. ^{[1
]}

Sharma, L. ^{[1
]}

Srivastava, R. ^{[1
]}

机构：

[1] Indian Inst Technol Roorkee, Dept Phys, Roorkee 247667, Uttar Pradesh, India

来源：

31ST INTERNATIONAL CONFERENCE ON PHOTONIC, ELECTRONIC AND ATOMIC COLLISIONS (ICPEAC XXXI) | 2020年 / 1412卷

关键词：

ENERGIES;

D O I：

10.1088/1742-6596/1412/14/142011

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A systematic study of electron impact excitation of Ge-like highly charged xenon ions have been carried out in Extreme Ultraviolet (EUV) range within fully relativistic multiconfiguration Dirac-Fock framework. The cross section calculation reported here are performed for dipole allowed transitions for Xe22+ ions from ground state 4s(2)4p(2) to 4s(2)4p(3) and 4s(2)4p4d excited fine structure levels. The analytic fitting for the cross section data for incident electron energy range within 50 to 1500 eV have been provided for further applications in various plasma diagnostic techniques.

引用

页数：1

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