Electron impact excitation of highly charged Ge-Like Xe ion

被引:0
|
作者
Bharti, S. [1 ]
Sharma, L. [1 ]
Srivastava, R. [1 ]
机构
[1] Indian Inst Technol Roorkee, Dept Phys, Roorkee 247667, Uttar Pradesh, India
关键词
ENERGIES;
D O I
10.1088/1742-6596/1412/14/142011
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
A systematic study of electron impact excitation of Ge-like highly charged xenon ions have been carried out in Extreme Ultraviolet (EUV) range within fully relativistic multiconfiguration Dirac-Fock framework. The cross section calculation reported here are performed for dipole allowed transitions for Xe22+ ions from ground state 4s(2)4p(2) to 4s(2)4p(3) and 4s(2)4p4d excited fine structure levels. The analytic fitting for the cross section data for incident electron energy range within 50 to 1500 eV have been provided for further applications in various plasma diagnostic techniques.
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页数:1
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