TCAD Simulations of Nano-scale Functional Neuron MOSFETs with Splitted Gate Bias on Floating Gate

被引：0
|
作者：
Kong, Hao-Yu [1 ]
Wang, Guan-Qing [1 ]
Sun, Lei [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2018年
基金：
中国国家自然科学基金;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The basic structure and operation mechanism of the neuron MOSFET with splitted gate bias on floating gate are introduced in this paper. 14nm channel-length two input-gate neuron MOSFET on bulk substrate is simulated by Sentaurus TCAD tools and the typical "variable threshold" characteristics are obtained for the nano-scale devices. Furthermore, UTB-SOI structure is utilized to enhance the device performance and is also simulated, Finally, the effects of related parameters are detailed analyzed. In conclusion, the value of coupling capacitance between the input gate and the floating gate and the sum of the structural capacitance can obviously affect threshold voltage.
引用
收藏
页码：377 / 379
页数：3
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