Combinatorial chemical vapor deposition of metal dioxides using anhydrous metal nitrates

被引：27
|
作者：
Smith, RC
Hoilien, N
Roberts, J
Campbell, SA
Gladfelter, WL
机构：
[1] Univ Minnesota, Dept Chem, Minneapolis, MN 55455 USA
[2] Univ Minnesota, Dept Elect & Comp Engn, Minneapolis, MN 55455 USA
来源：
CHEMISTRY OF MATERIALS | 2002年 / 14卷 / 02期
关键词：
D O I：
10.1021/cm011538m
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Modification of a low-pressure CVD reactor and the similar deposition chemistries of Ti(NO3)4, Sn(NO3)4, and Hf(NO3)4 allowed the growth of films on silicon exhibiting a compositional spread of the respective metal dioxides. Electrical measurements of 100 x 100 μm capacitors (shown in the picture) suggest that the dielectric constant of the film can be estimated by a weighted average of the dielectric constants of the individual oxides.
引用
收藏
页码：474 / 476
页数：3
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