Experimental Investigation and Improvement of Channel Mobility in 4H-SiC Trench MOSFETs

被引：4
|
作者：
Kutsuki, K. [1 ]
Kagoshima, E. [2 ]
Onishi, T. [2 ]
Saito, J. [2 ]
Soejima, N. [1 ]
Watanabe, Y. [1 ]
机构：
[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi, Japan
[2] Toyota Motor Co Ltd, Toyota, Aichi, Japan
来源：
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年
关键词：
D O I：
10.1109/iedm19573.2019.8993521
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This study proposes a method for evaluating the channel mobility for 4H-SiC trench MOSFETs. To calculate the channel mobility, the parasitic resistance, which mainly consists of the drift layer resistance, is removed based on a simple model of series resistance. The dominant component of carrier scattering, including optical phonon scattering, is analyzed using the proposed mobility model. The proposed method is used to evaluate the effect of the surface morphology of trench sidewalls on channel mobility for the first time. When the surface is atomically flat, there is a large increase in channel mobility. This increase is caused by the suppression of Coulomb scattering due to dangling bonds at SiC surfaces.
引用
收藏
页数：4
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