An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier

被引：4
|
作者：
Chu, K. W. [1 ,2 ]
Yen, C. T. [1 ]
Chung, Patrick [3 ]
Lee, C. Y. [1 ]
Huang, Tony [3 ]
Huang, C. F. [2 ]
机构：
[1] Ind Technol Res Inst, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Hsinchu, Taiwan
[3] Diodes Inc, Plano, TX USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
SiC; TMBS; RIE etching; SF6/Ar; micro-trenching; breakdown;
D O I：
10.4028/www.scientific.net/MSF.740-742.687
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A 4H-SiC TMBS diode with improved trench corners has been demonstrated. The trench profiles are improved by using a mixture of 12sccm/28sccm SF6/Ar gases, and a working pressure of 12 mtorr for RIE etching. The depth of micro-trenching has been reduced to lower than 0.07 mu m. The 4H-SiC TMBS diode with improved trench profiles shows a breakdown voltage over 725V.
引用
收藏
页码：687 / +
页数：2
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