An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier

被引：4
|
作者：
Chu, K. W. [1 ,2 ]
Yen, C. T. [1 ]
Chung, Patrick [3 ]
Lee, C. Y. [1 ]
Huang, Tony [3 ]
Huang, C. F. [2 ]
机构：
[1] Ind Technol Res Inst, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Hsinchu, Taiwan
[3] Diodes Inc, Plano, TX USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷
关键词：
SiC; TMBS; RIE etching; SF6/Ar; micro-trenching; breakdown;
D O I：
10.4028/www.scientific.net/MSF.740-742.687
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
A 4H-SiC TMBS diode with improved trench corners has been demonstrated. The trench profiles are improved by using a mixture of 12sccm/28sccm SF6/Ar gases, and a working pressure of 12 mtorr for RIE etching. The depth of micro-trenching has been reduced to lower than 0.07 mu m. The 4H-SiC TMBS diode with improved trench profiles shows a breakdown voltage over 725V.
引用
收藏
页码：687 / +
页数：2
相关论文
共 50 条
  • [41] Effect of surface roughness of trench sidewalls on electrical properties in 4H-SiC trench MOSFETs
    Kutsuki, Katsuhiro
    Murakami, Yuki
    Watanabe, Yukihiko
    Onishi, Toru
    Yamamoto, Kensaku
    Fujiwara, Hirokazu
    Ito, Takahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [42] 4H-SiC Trench MOSFET with Thick Bottom Oxide
    Takaya, Hidefumi
    Morimoto, Jun
    Yamamoto, Toshimasa
    Sakakibara, Jun
    Watanabe, Yukihiko
    Soejima, Narumasa
    Hamada, Kimimori
    SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 683 - +
  • [43] Epitaxial trench refill of 4H-SiC by chlorinated chemistry
    Colston, Gerard
    Turner, Kelly
    Renz, Arne
    Gammon, Peter
    Antoniou, Marina
    Mawby, Philip A.
    Shah, Vishal A.
    APPLIED PHYSICS LETTERS, 2024, 124 (19)
  • [44] Determination of optimum structure of 4H-SiC Trench MOSFET
    Harada, Shinsuke
    Kato, Makoto
    Kojima, Takahito
    Ariyoshi, Keiko
    Tanaka, Yasunori
    Okumura, Hajime
    2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2012, : 253 - 256
  • [45] A Novel 4H-SiC Asymmetric MOSFET with Step Trench
    Lan, Zhong
    Ou, Yangjie
    Hu, Xiarong
    Liu, Dong
    MICROMACHINES, 2024, 15 (06)
  • [46] 4H-SiC Trench MOSFET with Bottom Oxide Protection
    Kagawa, Yasuhiro
    Fujiwara, Nobuo
    Sugawara, Katsutoshi
    Tanaka, Rina
    Fukui, Yutaka
    Yamamoto, Yasuki
    Miura, Naruhisa
    Imaizumi, Masayuki
    Nakata, Shuhei
    Yamakawa, Satoshi
    SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 919 - +
  • [47] Design and Fabrication of Low Voltage Silicon Trench MOS Barrier Schottky Rectifier for High Temperature Applications
    Hussin, Mohd Rofei Mat
    Ismail, Muhamad Amri
    Sabli, Sharaifah Kamariah Wan
    Saidin, Nurafizah
    Wong, H. Y.
    Zaman, Mukter
    2015 IEEE 11TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (PEDS 2015), 2015, : 437 - 441
  • [48] Effects of p-type Islands Configuration on the Electrical Characteristics of the 4H-SiC Trench MOSFETs with Integrated Schottky Barrier Diode
    Yang, Fei
    Tian, Lixin
    Shen, Zhanwei
    Yan, Guoguo
    Liu, Xingfang
    Zhao, Wanshun
    Wang, Lei
    Sun, Guosheng
    Wui, Junmin
    Zhang, Feng
    Zeng, Yiping
    2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021), 2021, : 74 - 78
  • [49] A Double Trench 4H-SiC MOSFET as an Enhanced model of SiC UMOSFET
    Oraon, Alisha
    Shreya, Shradha
    Kumari, Renuka
    Islam, Aminul
    2017 7TH INTERNATIONAL SYMPOSIUM ON EMBEDDED COMPUTING AND SYSTEM DESIGN (ISED), 2017,
  • [50] 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
    Liu, Yanjuan
    Jia, Dezhen
    Fang, Junpeng
    MICROMACHINES, 2023, 14 (05)
12345