An Improvement of Trench Profile of 4H-SiC Trench MOS Barrier Schottky (TMBS) Rectifier

被引：4

作者：

Chu, K. W. ^{[1
,2
]}

Yen, C. T. ^{[1
]}

Chung, Patrick ^{[3
]}

Lee, C. Y. ^{[1
]}

Huang, Tony ^{[3
]}

Huang, C. F. ^{[2
]}

机构：

[1] Ind Technol Res Inst, Hsinchu, Taiwan

[2] Natl Tsing Hua Univ, Hsinchu, Taiwan

[3] Diodes Inc, Plano, TX USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

SiC; TMBS; RIE etching; SF6/Ar; micro-trenching; breakdown;

D O I：

10.4028/www.scientific.net/MSF.740-742.687

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A 4H-SiC TMBS diode with improved trench corners has been demonstrated. The trench profiles are improved by using a mixture of 12sccm/28sccm SF6/Ar gases, and a working pressure of 12 mtorr for RIE etching. The depth of micro-trenching has been reduced to lower than 0.07 mu m. The 4H-SiC TMBS diode with improved trench profiles shows a breakdown voltage over 725V.

引用

页码：687 / +

页数：2

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