A First Principle Study of the Carrier mobility and Injection Velocity for Strained 2D materials MOSFETs

被引：0
|
作者：
Luo, Kun [1 ]
Pan, Yu [1 ]
Hou, Zhaozhao [1 ]
Yao, Jiaxin [1 ]
Yang, Wen [1 ,2 ]
Wu, Zhenhua [1 ]
Yin, Huaxiang [1 ]
Wang, Wenwu [1 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China
[2] Beijing Computat Sci Res Ctr, Beijing 100094, Peoples R China
来源：
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年
关键词：
Quantum confinement; mobility; GAA NSFET;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a comprehensive first principle investigation of the carrier mobility and injection velocity in several typical 2 dimensional (2D) materials, which hold great potential for the future post-silicon ultra-scaled MOSFETs. Our numerical results that relaxed InSe and WS2 monolayer exhibits superior electron transport, wide bandgap tunability than their counterparts of MoS2 or WSe2. The strained monolayer and few-layer InSe and WS2 are thus a promising candidate for future 2D electronic nano-devices and will be systematically discussed in our regular manuscript later.
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页数：3
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