A First Principle Study of the Carrier mobility and Injection Velocity for Strained 2D materials MOSFETs

被引：0

作者：

Luo, Kun ^{[1
]}

Pan, Yu ^{[1
]}

Hou, Zhaozhao ^{[1
]}

Yao, Jiaxin ^{[1
]}

Yang, Wen ^{[1
,2
]}

Wu, Zhenhua ^{[1
]}

Yin, Huaxiang ^{[1
]}

Wang, Wenwu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Beijing Computat Sci Res Ctr, Beijing 100094, Peoples R China

来源：

2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) | 2018年

关键词：

Quantum confinement; mobility; GAA NSFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a comprehensive first principle investigation of the carrier mobility and injection velocity in several typical 2 dimensional (2D) materials, which hold great potential for the future post-silicon ultra-scaled MOSFETs. Our numerical results that relaxed InSe and WS2 monolayer exhibits superior electron transport, wide bandgap tunability than their counterparts of MoS2 or WSe2. The strained monolayer and few-layer InSe and WS2 are thus a promising candidate for future 2D electronic nano-devices and will be systematically discussed in our regular manuscript later.

引用

页数：3

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