Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser application

被引：0

作者：

Srinivasan, S. A. ^{[1
,2
,3
]}

Porret, C. ^{[1
]}

Pantouvaki, M. ^{[1
]}

Shimura, Y. ^{[1
,4
]}

Geiregat, P. ^{[2
,3
,5
]}

Loo, R. ^{[1
]}

Van Campenhout, J. ^{[1
]}

Van Thourhout, D. ^{[2
,3
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium

[2] Univ Ghent, IMEC, Dept Informat Technol, Photon Res Grp, Technol Pk Zwijnaarde 15 iGent, B-9052 Ghent, Belgium

[3] Univ Ghent, Ctr Nano & Biophoton, Technol Pk Zwijnaarde 15 iGent, B-9052 Ghent, Belgium

[4] Shizuoka Univ, Hamamatsu, Shizuoka 4328001, Japan

[5] Univ Ghent, Phys & Chem Nanostruct, B-9000 Ghent, Belgium

来源：

30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2017年

关键词：

Laser; Homogeneous broadening; Silicon photonics;

D O I：

暂无

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter Gamma(HOM)=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.

引用

页码：311 / 312

页数：2

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