Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser application

被引:0
|
作者
Srinivasan, S. A. [1 ,2 ,3 ]
Porret, C. [1 ]
Pantouvaki, M. [1 ]
Shimura, Y. [1 ,4 ]
Geiregat, P. [2 ,3 ,5 ]
Loo, R. [1 ]
Van Campenhout, J. [1 ]
Van Thourhout, D. [2 ,3 ]
机构
[1] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium
[2] Univ Ghent, IMEC, Dept Informat Technol, Photon Res Grp, Technol Pk Zwijnaarde 15 iGent, B-9052 Ghent, Belgium
[3] Univ Ghent, Ctr Nano & Biophoton, Technol Pk Zwijnaarde 15 iGent, B-9052 Ghent, Belgium
[4] Shizuoka Univ, Hamamatsu, Shizuoka 4328001, Japan
[5] Univ Ghent, Phys & Chem Nanostruct, B-9000 Ghent, Belgium
来源
30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2017年
关键词
Laser; Homogeneous broadening; Silicon photonics;
D O I
暂无
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter Gamma(HOM)=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.
引用
收藏
页码:311 / 312
页数:2
相关论文
共 50 条
  • [41] THERMAL-CONDUCTIVITY OF HEAVILY DOPED N-TYPE SI
    SOTA, T
    SUZUKI, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1991, 163 (01): : K5 - K7
  • [42] NERNST-ETTINGSHAUSEN EFFECT IN STRONGLY DOPED N-TYPE GE
    DOMANSKAYA, LI
    OMELYANOVSKII, EM
    FISTUL, VI
    TSIDILKOVSKII, IM
    SOVIET PHYSICS-SOLID STATE, 1964, 5 (10): : 2231 - 2233
  • [43] n-type conduction in Ge-doped CuGaSe2
    Schön, JH
    Oestreich, J
    Schenker, O
    Riazi-Nejad, H
    Klenk, M
    Fabre, N
    Arushanov, E
    Bucher, E
    APPLIED PHYSICS LETTERS, 1999, 75 (19) : 2969 - 2971
  • [44] The optical property of tensile-strained n-type doped Ge
    Huang Shi-Hao
    Li Cheng
    Chen Cheng-Zhao
    Yuan-Yu, Zheng
    Lai Hong-Kai
    Chen Song-Yan
    ACTA PHYSICA SINICA, 2012, 61 (03)
  • [45] ANODIC DISSOLUTION OF HEAVILY DOPED N-TYPE GE IN AQUEOUS SOLUTIONS
    GERETH, R
    COWHER, ME
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (06) : 645 - &
  • [46] THE STRESS DEPENDENCE OF ACOUSTIC PROPERTIES OF HEAVILY DOPED N-TYPE GE
    WATANABE, H
    SOTA, T
    SUZUKI, K
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1991, 3 (25) : 4547 - 4553
  • [47] Influence of YbP on the thermoelectric properties of n-type P doped Si95Ge5 alloy
    Sui, Fan
    Bux, Sabah K.
    Kauzlarich, Susan M.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 745 : 624 - 630
  • [48] Application of Thin Epitaxial Hydrogenated Si Layers to High Efficiency Heterojunction Solar Cells on N-Type Si Substrates
    Hekmatshoar, Bahman
    Shahrjerdi, Davood
    Sadana, Devendra K.
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 971 - 972
  • [49] Structural and electrical properties of Ge-on-Si(001) layers with ultra heavy n-type doping grown by MBE
    Yurasov, D., V
    Antonov, A., V
    Drozdov, M. N.
    Yunin, P. A.
    Andreev, B. A.
    Bushuykin, P. A.
    Baydakova, N. A.
    Novikov, A., V
    JOURNAL OF CRYSTAL GROWTH, 2018, 491 : 26 - 30
  • [50] HOLE INJECTION INTO NON-TRANSPARENT N-TYPE SI LAYERS
    BERGER, HH
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (10) : 1413 - 1414