Analysis of Homogeneous Broadening in n-type doped Ge layers on Si for laser application

被引：0
|
作者：
Srinivasan, S. A. [1 ,2 ,3 ]
Porret, C. [1 ]
Pantouvaki, M. [1 ]
Shimura, Y. [1 ,4 ]
Geiregat, P. [2 ,3 ,5 ]
Loo, R. [1 ]
Van Campenhout, J. [1 ]
Van Thourhout, D. [2 ,3 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Heverlee, Belgium
[2] Univ Ghent, IMEC, Dept Informat Technol, Photon Res Grp, Technol Pk Zwijnaarde 15 iGent, B-9052 Ghent, Belgium
[3] Univ Ghent, Ctr Nano & Biophoton, Technol Pk Zwijnaarde 15 iGent, B-9052 Ghent, Belgium
[4] Shizuoka Univ, Hamamatsu, Shizuoka 4328001, Japan
[5] Univ Ghent, Phys & Chem Nanostruct, B-9000 Ghent, Belgium
来源：
30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2017年
关键词：
Laser; Homogeneous broadening; Silicon photonics;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The homogeneous broadening in Phosphorus doped Ge layers is characterized using photoluminescence spectroscopy and absorption measurements. A broadening parameter Gamma(HOM)=45meV due to carrier scattering effects was extracted leading to an estimated increase in threshold current density for Ge lasers by a factor >4.
引用
收藏
页码：311 / 312
页数：2
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