NEW WAFER-SCALE MEMS FABRICATION OF 3D SILICON/METAL CANTILEVER ARRAY SENSOR

被引：0

作者：

Zhang, Y. ^{[1
]}

Toda, A. ^{[2
]}

Okada, H. ^{[1
]}

Kobayashi, T. ^{[1
]}

Itoh, T. ^{[1
]}

Maeda, R. ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Ubiquitous & Micro Engn UMEMSME, Tokyo, Japan

[2] Meltex Inc, Tokyo, Japan

来源：

2012 IEEE 25TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS) | 2012年

基金：

日本学术振兴会;

关键词：

SINGLE-CRYSTAL SILICON; MASK;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a new wafer-scale micromachining technology of three-dimensional (3D) cantilever array for sensor application. The 3D cantilever consists of a vertically Si/metal laminated structure and works in the in-the-plane mode so that it has the advantage of easy-to-package, non-stiction and compact. Prototype of 5-pair 3D cantilever array was successfully fabricated in 4-inch wafer scale. However, its fabrication is involved of micromachining technology of metal film on high aspect ratio structures. 4-inch wafer-scale wet-etching technology of electroless-plated Ni-8%P alloy film (similar to 1.5 mu m-thick) was for the first time successfully established on a high topographic surface with the minimum feature size of about 20 mu m.

引用

页数：4

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