Defect physics of the ordered defect compound CuIn3Se5

被引：13

作者：

Márquez, R ^{[1
]}

Rincón, C ^{[1
]}

机构：

[1] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Dept Fis, Merida 5101, Venezuela

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 71卷 / 01期

关键词：

CuIn3Se5; ordered defect compounds; defect physics and chemistry; activation energies;

D O I：

10.1016/S0927-0248(01)00039-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The activation energies of acceptor and donor defect states in the ordered defect compound CuIn3Se5 are calculated by using a simple model based on the effective-mass theory for single, double and triple point defect centers. It is found that the values of these energies for both shallow and moderately deep levels are in reasonable agreement with those determined from experimental data. From the analysis of the results, a tentative assignment of the origins of these centers has been made. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：19 / 26

页数：8

共 50 条

[41] Elaboration and Characterisation of Zn/CuIn3Se5 Thin Films
Yandjah, L.
Kavak, H.
Bechiri, L.
INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATION & PROPERTIES (NAP), 2016,
[42] Structural Properties of CuIn3Se5 and Influence of Growth Conditions
Luis Martin De Vidales, Jose
Charbonnier, Helene
Diaz, Raquel
Manuel Merino, Jose
Rueda, Fernando
Leon, Maximo
JAPANESE JOURNAL OF APPLIED PHYSICS, 2000, 39 (01) : 336 - 338
[43] Thermally stimulated current and electrical resistivity in CuIn3Se5
Aranguren, G
Hernández, E
Pescador, AL
Rincón, CAD
León, M
MATERIALS LETTERS, 2004, 58 (05) : 573 - 577
[44] Fabrication and photosensitivity of heterojunctions based on CuIn3Se5 crystals
I. V. Bodnar’
S. E. Nikitin
G. A. Il’chuk
V. Yu. Rud’
Yu. V. Rud’
M. V. Yakushev
Semiconductors, 2004, 38 : 1192 - 1197
[45] Temperature dependence of the fundamental absorption edge in CuIn3Se5
Marin, G
Wasim, SM
Rincon, C
Perez, GS
Power, C
Mora, AE
JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) : 3364 - 3366
[46] Studies on monocrystalline CuInSe2 and CuIn3Se5
Wang, HP
Shih, I
Champness, CH
THIN SOLID FILMS, 2000, 361 : 494 - 497
[47] Dynamic electrical conduction in p-type CuIn3Se5
Essaleh, L.
Marin, G.
Wasim, S. M.
Alimoussa, A.
Bourial, A.
SUPERLATTICES AND MICROSTRUCTURES, 2016, 92 : 353 - 358
[48] Photoconductivity in the ordered vacancy compound CuIn5Se8
Philip, RR
Pradeep, B
Shripathi, T
APPLIED SURFACE SCIENCE, 2005, 250 (1-4) : 216 - 222
[49] Effect of γ-ray radiation on photosensitivity of ZnO/CuIn3Se5 heterojunctions
Bairamov, B. Kh.
Bodnar', I. V.
Emtsev, V. V.
Poloskin, D. S.
Rud', V. Yu.
Rud', Yu. V.
Yakushev, M. V.
SEMICONDUCTORS, 2006, 40 (01) : 64 - 66
[50] Electrical properties of CuIn3Se5 bulk crystal at low temperature
Hernández, E
Pescador, AL
Rincón, CAD
León, M
CRYSTAL RESEARCH AND TECHNOLOGY, 2003, 37 (10) : 1088 - 1093

← 1 2 3 4 5 →