Defect physics of the ordered defect compound CuIn3Se5

被引:13
|
作者
Márquez, R [1 ]
Rincón, C [1 ]
机构
[1] Univ Los Andes, Fac Ciencias, Ctr Estudios Semicond, Dept Fis, Merida 5101, Venezuela
关键词
CuIn3Se5; ordered defect compounds; defect physics and chemistry; activation energies;
D O I
10.1016/S0927-0248(01)00039-3
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The activation energies of acceptor and donor defect states in the ordered defect compound CuIn3Se5 are calculated by using a simple model based on the effective-mass theory for single, double and triple point defect centers. It is found that the values of these energies for both shallow and moderately deep levels are in reasonable agreement with those determined from experimental data. From the analysis of the results, a tentative assignment of the origins of these centers has been made. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:19 / 26
页数:8
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