On discrete random dopant modeling in drift-diffusion simulations: physical meaning of 'atomistic' dopants

被引：91
|
作者：
Sano, N [1 ]
Matsuzawa, K
Mukai, M
Nakayama, N
机构：
[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3057573, Japan
[2] STARC, Kohoku Ku, Yokohama, Kanagawa 2220033, Japan
来源：
MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 02期
关键词：
D O I：
10.1016/S0026-2714(01)00138-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the physics behind the 'atomistic' dopant model widely used in drift-diffusion (DD) simulators for the study of statistical threshold voltage variations in ultra-small MOSFETs. It is found that the conventional dopant model, when extended to the extreme atomistic regime, becomes physically inconsistent with the concepts of electric potential presumed in DD device simulations. The split of the Coulomb potential between the long-range and short-range parts associated with discretized dopants. is critical for the device simulations under the atomistic regime. A new dopant model to overcome such problems for 3-dimensional DD simulations is proposed by employing this idea. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：189 / 199
页数：11
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