Surface effects on the thermal conductivity of silicon nanowires

被引:5
|
作者
Li, Hai-Peng [1 ]
Zhang, Rui-Qin [2 ]
机构
[1] China Univ Min & Technol, Sch Phys Sci & Technol, Xuzhou 221116, Peoples R China
[2] City Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
基金
中国国家自然科学基金;
关键词
silicon nanowires; thermal conductivity; phonon transport; surface effect; TRANSPORT; PHONON; SIMULATION; DEPENDENCE; GE; SI; NANOSTRUCTURES; SCATTERING; REDUCTION; ROUGHNESS;
D O I
10.1088/1674-1056/27/3/036801
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thermal transport in silicon nanowires (SiNWs) has recently attracted considerable attention due to their potential applications in energy harvesting and generation and thermal management. The adjustment of the thermal conductivity of SiNWs through surface effects is a topic worthy of focus. In this paper, we briefly review the recent progress made in this field through theoretical calculations and experiments. We come to the conclusion that surface engineering methods are feasible and effective methods for adjusting nanoscale thermal transport and may foster further advancements in this field.
引用
收藏
页数:8
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