Conductivity enhancement by surface chemistry in silicon nanowires

被引：0
|
作者：
Zhang R.-Q. [1 ]
Dou K.-P. [1 ]
de Sarkar A. [1 ]
机构：
[1] City University of Hong Kong, Department of Physics and Materials Science, Hong Kong SAR
来源：
Nanoscience and Nanotechnology - Asia | 2011年 / 1卷 / 02期
关键词：
A surface passivation; Adsorbate; Ambience; Carrier concentration; Conductivity; Defect; Delocalization; Doping; Majority; Minority; Nanowire core;
D O I：
10.2174/2210682011101010177
中图分类号：
学科分类号：
摘要：
The silicon nanowires (SiNWs) comprise a core-shell structure. Contrasted to conventional volume doping to modulate the transport properties of SiNWs, recent studies have revealed an economic and non-destructive approach to induce doping through surface engineering. In this review, extensive first principles theoretical investigations are presented which revealed the influence of surface passivation and ambience in modulating the conductivity of SiNWs. The theoretical findings rationalize several experimental results and provide useful pointers for tuning the electrical properties of nanomaterials. © 2011 Bentham Science Publishers.
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页码：177 / 182
页数：5
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