Study of silicon nanoparticles formation in silicon nitride

被引：1

作者：

Ratajczak, Jacek ^{[1
]}

Hejduk, Krzysztof ^{[1
]}

Lipinski, Marek ^{[2
]}

Piotrowski, Tadeusz ^{[1
]}

Pluska, Mariusz ^{[1
]}

Laszcz, Adam ^{[1
]}

Czerwinski, Andrzej ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Elect Technol, PL-02668 Warsaw, Poland

[2] Polish Acad Sci, Inst Met & Mat Sci, PL-02668 Warsaw, Poland

来源：

ELECTRON MICROSCOPY XIV | 2012年 / 186卷

关键词：

silicon nanocrystals; TEM; CVD; silicon nitride; quantum dots; photovoltage; QUANTUM DOTS;

D O I：

10.4028/www.scientific.net/SSP.186.66

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

We present results of the study on the silicon nanoparticles formation in multilayer silicon nitride structures. These structures consist of pairs of stoichiometric silicon nitride dielectric layers (Si3N4) and silicon rich nitride layers (SRN). Silicon nanocrystals precipitate from the SRN layer during annealing at high temperatures (1000 degrees C or 1100 degrees C). High resolution transmission electron microscopy has been applied for investigation of the nanocrystals formation. Surface photovoltage spectroscopy technique was used for the spectral characterization of prepared structures.

引用

页码：66 / +

页数：2

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