机构:
Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Song, Sunghoon
[1
]
Jang, Jingon
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Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Jang, Jingon
[2
]
Ji, Yongsung
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机构:
Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Ji, Yongsung
[1
]
Park, Sungjun
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机构:
Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Park, Sungjun
[1
]
Kim, Tae-Wook
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机构:
Korea Inst Sci & Technol, Soft Innovat Mat Res Ctr, Bongdong Eup 565905, Jeollabukdo, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Kim, Tae-Wook
[3
]
Song, Younggul
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Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Song, Younggul
[2
]
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机构:
Yoon, Myung-Han
[1
]
Ko, Heung Cho
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h-index: 0
机构:
Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Ko, Heung Cho
[1
]
Jung, Gun-Young
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Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Jung, Gun-Young
[1
]
Lee, Takhee
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机构:
Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South KoreaGwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
Lee, Takhee
[2
]
机构:
[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[3] Korea Inst Sci & Technol, Soft Innovat Mat Res Ctr, Bongdong Eup 565905, Jeollabukdo, South Korea
We fabricated an 8 x 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 x 10(4) s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to similar to 30 degrees. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations. (C) 2013 Elsevier B.V. All rights reserved.