Twistable nonvolatile organic resistive memory devices

被引：25

作者：

Song, Sunghoon ^{[1
]}

Jang, Jingon ^{[2
]}

Ji, Yongsung ^{[1
]}

Park, Sungjun ^{[1
]}

Kim, Tae-Wook ^{[3
]}

Song, Younggul ^{[2
]}

Yoon, Myung-Han ^{[1
]}

Ko, Heung Cho ^{[1
]}

Jung, Gun-Young ^{[1
]}

Lee, Takhee ^{[2
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[3] Korea Inst Sci & Technol, Soft Innovat Mat Res Ctr, Bongdong Eup 565905, Jeollabukdo, South Korea

来源：

ORGANIC ELECTRONICS | 2013年 / 14卷 / 08期

关键词：

Organic memory; Twistable; Nonvolatile; Resistive memory; THIN-FILMS; TRANSISTORS; POLYMER; CIRCUITS; EFFICIENT; NANOPARTICLES; BISTABILITY; INTEGRATION; ELEMENTS;

D O I：

10.1016/j.orgel.2013.05.003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We fabricated an 8 x 8 cross-bar array-type organic nonvolatile memory devices on twistable poly(ethylene terephthalate) (PET) substrate. A composite of polyimide (PI) and 6-phenyl-C61 butyric acid methyl ester (PCBM) was used as the active material for the memory devices. The organic memory devices showed a high ON/OFF current ratio, reproducibility with good endurance cycle, and stability with long retention time over 5 x 10(4) s on the flat substrate. The device performance remained well under the twisted condition with a twist angle up to similar to 30 degrees. The twistable organic memory device has a potential to be utilized in more complex flexible organic device configurations. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：2087 / 2092

页数：6

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