Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth

被引：14

作者：

Kutsukake, Kentaro ^{[1
]}

Ise, Hideaki ^{[1
]}

Tokumoto, Yuki ^{[1
]}

Ohno, Yutaka ^{[1
]}

Nakajima, Kazuo ^{[2
]}

Yonenaga, Ichiro ^{[1
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Kyoto Univ, Grad Sch Energy Sci, Kyoto 6068501, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2012年 / 352卷 / 01期

关键词：

Computer simulation; Directional solidification; Impurities; Growth from melt; Semiconducting silicon; Solar cells; SEMICONDUCTOR SILICON; SOLAR-CELLS;

D O I：

10.1016/j.jcrysgro.2012.02.004

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We propose a simple numerical model for incorporation of oxygen and carbon impurities into multicrystalline Si during one-directional crystal growth in comparison with experimental results. The model includes parameters that are oxygen and carbon concentrations in the melt in the beginning of the growth, carbon flux form the atmosphere, oxygen fluxes from the crucible and to the atmosphere. Variation of oxygen and carbon concentrations in multicrystalline Si ingots with a diameter of 30 cm and a height of 7.5 cm solidified one-directionally was measured by infra red absorption spectroscopy at room temperature. By fitting the numerical results on the experimental results, the parameters were evaluated. In the modeling we found fruitful suggestions for suppressing and controlling the oxygen and carbon concentrations in multicrystalline Si for solar cells. (c) 2012 Elsevier B.V. All rights reserved.

引用

页码：173 / 176

页数：4