OXYGEN PARTITIONING ANALYSIS DURING CZOCHRALSKI SILICON CRYSTAL-GROWTH VIA A DOPANT MARKER AND A SIMPLE TRANSFER-FUNCTION MODELING TECHNIQUE .2. GROWTH VELOCITY AND APPLIED MAGNETIC-FIELD TRANSIENTS

被引：6

作者：

YEN, CT

TILLER, WA

机构：

[1] Department of Materials Science and Engineering, Stanford University, Stanford

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 118卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90052-K

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Intermediate transient oxygen redistribution during commercial size scale Czochralski silicon crystal growth caused by a step change in crystal growth velocity and applied magnetic field has been examined using the dopant marker/transfer function modeling technique. A single oxygen species in the melt is unable to fit the experimental data. However, a model based upon two oxygen species, SiO4 tetrahedra and O monomer, with k0O > 1 and k0SiO4 << 1 plus a melt reaction, SiO4 <-> Si + 4O, is able to provide good fit to the data. Such a two oxygen species model yields an effective partition coefficient for oxygen greater than or less than unity depending upon the particular set of melt and crystal growth conditions.

引用

页码：85 / 92

页数：8