Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

被引：30

作者：

Ebert, Ph. ^{[1
]}

Ivanova, L. ^{[2
]}

Borisova, S. ^{[1
]}

Eisele, H. ^{[2
]}

Laubsch, A. ^{[3
]}

Daehne, M. ^{[2
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期

关键词：

dislocation dipoles; energy gap; gallium compounds; III-V semiconductors; scanning tunnelling microscopy; stacking faults; wide band gap semiconductors; VAPOR-PHASE EPITAXY; THREADING DISLOCATIONS; CHARGES; FILMS; EDGE;

D O I：

10.1063/1.3073741

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the type, spatial distribution, line direction, and electronic properties of dislocations in n-type GaN by scanning tunneling microscopy. We found uncharged perfect dislocations with a/3{1120} Burgers vectors and negatively charged Shockley partial dislocations with a/3{1100} Burgers vectors interconnected by a negatively charged stacking fault. The charges are traced to different charge transfer levels associated with the particular core structure.

引用

页数：3

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