Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy

被引：30
|
作者：
Ebert, Ph. [1 ]
Ivanova, L. [2 ]
Borisova, S. [1 ]
Eisele, H. [2 ]
Laubsch, A. [3 ]
Daehne, M. [2 ]
机构：
[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[3] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期
关键词：
dislocation dipoles; energy gap; gallium compounds; III-V semiconductors; scanning tunnelling microscopy; stacking faults; wide band gap semiconductors; VAPOR-PHASE EPITAXY; THREADING DISLOCATIONS; CHARGES; FILMS; EDGE;
D O I：
10.1063/1.3073741
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the type, spatial distribution, line direction, and electronic properties of dislocations in n-type GaN by scanning tunneling microscopy. We found uncharged perfect dislocations with a/3{1120} Burgers vectors and negatively charged Shockley partial dislocations with a/3{1100} Burgers vectors interconnected by a negatively charged stacking fault. The charges are traced to different charge transfer levels associated with the particular core structure.
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页数：3
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