Impact of Semiconductor Permittivity Reduction on Electrical Characteristics of Nanoscale MOSFETs

被引：5

作者：

Chen, Si-Hua ^{[1
]}

Lian, Shang-Wei ^{[2
]}

Wu, Tzung Rang ^{[1
]}

Chang, Tay-Rong ^{[2
,3
]}

Liou, Jia-Ming ^{[4
]}

Lu, Darsen D. ^{[1
]}

Kao, Kuo-Hsing ^{[1
,3
,5
]}

Chen, Nan-Yow ^{[5
]}

Lee, Wen-Jay ^{[5
]}

Tsai, Jyun-Hwei ^{[5
]}

机构：

[1] NCKU, Dept Elect Engn, Tainan 701, Taiwan

[2] Natl Cheng Kung Univ, Dept Phys, Tainan 701, Taiwan

[3] NCKU, Ctr Quantum Frontiers Res & Technol Q Fort, Tainan 701, Taiwan

[4] Natl Cheng Kung Univ, Dept Math, Tainan 701, Taiwan

[5] Natl Ctr High Performance Comp, Hsinchu 30076, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2019年 / 66卷 / 06期

关键词：

Green's function (NEGF); nonequilibrium; permittivity; polarization; quantization; subthreshold swing; threshold voltage;

D O I：

10.1109/TED.2019.2912058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The dielectric screening property of a semiconductor is very crucial for the electrical characteristics of a MOSFET, and which can be described mathematically by Poisson equation via the permittivity. While the theory and experiments have corroborated the permittivity reduction of nanoscale Si, this paper studies the electrical characteristics of MOSFETs considering the reduced channel permittivity by quantum transport simulations. It is found that the channel permittivity reduction may mitigate the short-channel effects, showing subthreshold swing improvement and threshold voltage shift of MOSFETs in nanoscale. Compared to quantization effects, the positive and negative impacts of the channel permittivity reduction on the devices in particularly nanoscale have been investigated. This paper elucidates the necessity of considering semiconductor permittivity reduction for nanoscale device design and simulations.

引用

页码：2509 / 2512

页数：4

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