Electrical characteristics of a triode with an n-Si/Mo-Au double thin film n-Si (n-Si/Mo-Au/n-Si) structure

被引：0
|
作者：
Gekka, Y
Satoh, K
Nagami, K
Harayama, A
机构：
[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa 259-12, 1117, Kitakaname
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
D O I：
10.1016/S0169-4332(96)00934-8
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A new type triode device has been fabricated. The triode has electrodes at the end of two n-Si on both sides of n-Si/Mo-Au/n-Si structure and the third electrode on hla-Au double film. The n-Si/Mo-Au/n-Si structure was made by contact of Mo and Au films forming Schottky barriers of n-Si/Mo and Au/n-Si. In the measurement results of electrical characteristics of this triode, the function of active device or transistor action was observed.
引用
收藏
页码：718 / 721
页数：4
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