Ultrafast Multilevel Switching in Au/YIG/n-Si RRAM

被引：24

作者：

Chen, Zhiwei ^{[1
,2
]}

Huang, Weichuan ^{[1
,2
]}

Zhao, Wenbo ^{[1
,2
]}

Hou, Chuangming ^{[1
,2
]}

Ma, Chao ^{[1
,2
]}

Liu, Chuanchuan ^{[1
,2
]}

Sun, Haoyang ^{[1
,2
]}

Yin, Yuewei ^{[1
,2
]}

Li, Xiaoguang ^{[1
,2
,3
]}

机构：

[1] Univ Sci & Technol China, Dept Phys, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, CAS Key Lab Strongly Coupled Quantum Matter Phys, Hefei 230026, Anhui, Peoples R China

[3] Collaborat Innovat Ctr Adv Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

ADVANCED ELECTRONIC MATERIALS | 2019年 / 5卷 / 02期

关键词：

fast switching; multistates; unipolar resistance switching; yttrium iron garnet (YIG); RESISTIVE MEMORY; EVOLUTION; TAOX; PERFORMANCE; ENDURANCE;

D O I：

10.1002/aelm.201800418

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next-generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (approximate to 540 ps) with high off/on resistance ratio (approximate to 10(4)) are obtained in yttrium iron garnet Y3Fe5O12 (YIG)-based resistive memory on n-Si substrate. The sub-nanosecond operation is also successfully performed up to 85 degrees C with an off/on resistance ratio of approximate to 10(3). In addition, by using different compliance currents for the set process, five discrete resistance levels with ultrafast switchings among them are achieved and the multilevel states show reliable retention (>10(4) s) The large, stable, reproducible, and reliable switching behaviors of the Au/YIG/n-Si RRAM cell shows its great potential for ultrafast multilevel memory applications.

引用

页数：7

共 50 条

[1] Electrical characteristics of a triode with an n-Si/Mo-Au double thin film n-Si (n-Si/Mo-Au/n-Si) structure
Gekka, Y
Satoh, K
Nagami, K
Harayama, A
APPLIED SURFACE SCIENCE, 1997, 113 : 718 - 721
[2] A Comparative Study on the Main Electrical Parameters of Au/n-Si, Au/Biphenyl-CuPc/n-Si/ and Au/Biphenylsubs-CoPc/n-Si/ Type Schottky Barrier Diodes
Demir, Ahmet
Yucedag, Ibrahim
Ersoz, Gulcin
Altindal, Semsettin
Baraz, Nalan
Kandaz, Mehmet
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2016, 11 (05) : 620 - 625
[3] Comparative study of the electrical properties of Au/n-Si(MS) and Au/Si3N4 /n-Si(MIS) Schottky diodes
Adem Tataroglu
Chinese Physics B, 2013, 22 (06) : 631 - 636
[4] Comparative study of the electrical properties of Au/n-Si (MS) and Au/Si3N4/n-Si (MIS) Schottky diodes
Tataroglu, Adem
CHINESE PHYSICS B, 2013, 22 (06)
[5] Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes
Taser, A.
Orhan, Z.
Aykac, C.
Ozakin, O.
Guzeldir, B.
Saglam, M.
MATERIALS TODAY-PROCEEDINGS, 2021, 46 : 6954 - 6959
[6] Comparison of electrical and optical parameters of Au/n-Si and Ag/n-Si Schottky barrier photodiodes
Keffous, A
Siad, A
Cheriet, A
Benrekaa, N
Belkacem, Y
Menari, H
Chergui, W
Dahmani, A
APPLIED SURFACE SCIENCE, 2004, 236 (1-4) : 42 - 49
[7] Effect of electron radiation on electrical parameters of Zn/n-Si/Au–Sb and Zn/ZnO/n-Si/Au–Sb diodes
M. A. Salari
M. Sağlam
A. Baltakesmez
B. Güzeldir
Journal of Radioanalytical and Nuclear Chemistry, 2019, 319 : 667 - 678
[8] A detailed comparative study on the main electrical parameters of Au/n-Si and Au/PVA:Zn/n-Si Schottky barrier diodes
Aydemir, Umut
Tascioglu, Ilke
Altindal, Semsettin
Uslu, Ibrahim
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2013, 16 (06) : 1865 - 1872
[9] Electrochemical fabrication of n-Si/Au Schottky junctions
Oskam, G
van Heerden, D
Searson, PC
APPLIED PHYSICS LETTERS, 1998, 73 (22) : 3241 - 3243
[10] Electrical property investigation of the Au/n-Si and Au/PVA+benzimidazole Co complex/n-Si diodes under ultraviolet illumination
Muharrem Gökçen
Songül Taran
Ersin Orhan
Journal of Materials Science: Materials in Electronics, 2021, 32 : 6323 - 6330

← 1 2 3 4 5 →