Epitaxially grown free-standing diamond platelet

被引:12
|
作者
Suzuki, K [1 ]
Fukuda, H
Yamada, T
Sawabe, A
机构
[1] Toplas Engn, 1-9-9 Nishi Tsutsujigaoka, Chofu, Tokyo, Japan
[2] Aoyama Gakuin Univ, Setagaya Ku, Tokyo, Japan
关键词
diamond; hetero-epitaxy; d.c. plasma CVD; free-standing;
D O I
10.1016/S0925-9635(01)00497-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We obtained an epitaxially grown free-standing diamond platelet utilizing epitaxial diamond film formed on a {100} iridium surface using a d.c. plasma CVD process. Iridium was selected as a suitable substrate material for the heteroepitaxy of diamond based on original criteria. Confocal Raman spectroscopy revealed that the diamond platelet contained little or no non-diamond carbon. The obtained diamond platelet is transparent to visible light and cleavable along the < 110 > direction on the surface. The angles between the top surface and the cross-sectional surfaces are approximately 55 degrees, almost equal to the theoretical angle of 54.74 degrees between {100} and {111} planes in cubic crystals. Therefore, the cross-sectional surfaces would be {111} planes of a typical facet for single-crystalline diamond. This means that the diamond platelet we have formed has relatively good crystallinity. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:2153 / 2156
页数:4
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