Epitaxially grown free-standing diamond platelet

被引:12
|
作者
Suzuki, K [1 ]
Fukuda, H
Yamada, T
Sawabe, A
机构
[1] Toplas Engn, 1-9-9 Nishi Tsutsujigaoka, Chofu, Tokyo, Japan
[2] Aoyama Gakuin Univ, Setagaya Ku, Tokyo, Japan
关键词
diamond; hetero-epitaxy; d.c. plasma CVD; free-standing;
D O I
10.1016/S0925-9635(01)00497-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We obtained an epitaxially grown free-standing diamond platelet utilizing epitaxial diamond film formed on a {100} iridium surface using a d.c. plasma CVD process. Iridium was selected as a suitable substrate material for the heteroepitaxy of diamond based on original criteria. Confocal Raman spectroscopy revealed that the diamond platelet contained little or no non-diamond carbon. The obtained diamond platelet is transparent to visible light and cleavable along the < 110 > direction on the surface. The angles between the top surface and the cross-sectional surfaces are approximately 55 degrees, almost equal to the theoretical angle of 54.74 degrees between {100} and {111} planes in cubic crystals. Therefore, the cross-sectional surfaces would be {111} planes of a typical facet for single-crystalline diamond. This means that the diamond platelet we have formed has relatively good crystallinity. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:2153 / 2156
页数:4
相关论文
共 50 条
  • [21] Properties of free-standing CVD diamond optical components
    Savage, JA
    Wort, CJH
    Pickles, CSJ
    Sussmann, RS
    Sweeney, CG
    McClymont, MR
    Brandon, JR
    Dodge, CN
    Beale, AC
    WINDOW AND DOME TECHNOLOGIES AND MATERIALS V, 1997, 3060 : 144 - 159
  • [22] Growth of free-standing diamond films of hemispheric shells
    Huang, SM
    Hong, FCN
    SURFACE & COATINGS TECHNOLOGY, 2006, 200 (10): : 3151 - 3155
  • [23] Tensile and fatigue strength of free-standing CVD diamond
    Davies, AR
    Field, JE
    Takahashi, K
    Hada, K
    DIAMOND AND RELATED MATERIALS, 2005, 14 (01) : 6 - 10
  • [24] Free-standing diamond film preparation using copper substrate
    Fan, QH
    Gracio, J
    Pereira, E
    DIAMOND AND RELATED MATERIALS, 1997, 6 (2-4) : 422 - 425
  • [25] Fabrication of structure-designed free-standing diamond film
    Zhou, YL
    Chen, GC
    Chen, G
    Li, CM
    Tong, YM
    Lu, FX
    PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 3611 - 3614
  • [26] Properties of AlN film deposited on free-standing diamond film
    Zhang, Ying-Ying
    Li, Cheng-Ming
    Chen, Liang-Xian
    Liu, Jin-Long
    Hei, Li-Fu
    Lü, Fan-Xiu
    Cailiao Rechuli Xuebao/Transactions of Materials and Heat Treatment, 2011, 32 (08): : 1 - 5
  • [27] Fracture behavior of CVD thick free-standing diamond films
    Jinshu Rechuli Xuebao, 3 (117-122):
  • [28] Preparation of ZnO Thin Films on Free-Standing Diamond Substrates
    唐可
    王林军
    黄健
    徐闰
    赖建明
    王俊
    闵嘉华
    史伟民
    夏义本
    Plasma Science and Technology, 2009, (05) : 587 - 591
  • [29] Electrical properties of the free-standing diamond film at high voltages
    Huang, BR
    Ke, WC
    Chen, WK
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (5A): : 3240 - 3245
  • [30] Electrical properties of the free-standing diamond film at high voltages
    Huang, Bohr-Ran
    Ke, Wen-Cheng
    Chen, Wei-Kuo
    1600, Japan Society of Applied Physics (40):