Measurement of electrical parameters of silicon up to 60GHz

被引：0

作者：

Salhi, F ^{[1
]}

Riedl, W ^{[1
]}

John, W ^{[1
]}

Reichl, H ^{[1
]}

机构：

[1] FhG IZM, D-13355 Berlin, Germany

来源：

PROCEEDINGS OF THE 7TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE, VOLS. 1 AND 2 | 2005年

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper summarises test structures for continuous determination of electrical properties of material. On the basis of onchip technology a silicon wafers with a resistivities (p) of 2000Ohm*cm are characterised. A method for determination of material properties in a frequency range of 4 GHz to at least 60 GHz is presented. Fundamental importance is attached to monitoring of the relative permittivity epsilon(r) and the dissipation factor tan delta. High frequency measurements are compared to simulation results. Finally, the extracted electrical material parameters of silicon are presented and discussed.

引用

页码：163 / 166

页数：4

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