Measurement of electrical parameters of silicon up to 60GHz

This paper summarises test structures for continuous determination of electrical properties of material. On the basis of onchip technology a silicon wafers with a resistivities (p) of 2000Ohm*cm are characterised. A method for determination of material properties in a frequency range of 4 GHz to at least 60 GHz is presented. Fundamental importance is attached to monitoring of the relative permittivity epsilon(r) and the dissipation factor tan delta. High frequency measurements are compared to simulation results. Finally, the extracted electrical material parameters of silicon are presented and discussed.