Transient Gate Resistance Thermometry Demonstrated on GaAs and GaN FET

被引：0

作者：

Schwitter, Bryan K. ^{[1
]}

Parker, Anthony E. ^{[2
]}

Mahon, Simon J. ^{[1
]}

Heimlich, Michael C. ^{[2
]}

机构：

[1] M A COM Technol Solut Inc, 157 Walker St, North Sydney, NSW 2060, Australia

[2] Macquarie Univ, Dept Engn, Sydney, NSW 2109, Australia

来源：

2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2016年

关键词：

Gallium nitride; gallum arsenide; HEMTs; MMICs; temperature measurement; transient thermal analysis; JUNCTION TEMPERATURE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented at the wafer level on a GaAs pHEMT and an AlGaN/GaN-on-SiC HEMT. Dynamic self heating is monitored from hundreds of nanoseconds to hundreds of milliseconds. Preliminary finite-element simulations across a range of power dissipation levels agree closely with T-GRT at, and beyond, 1 mu s after the applied drain pulse. Characterization of dynamic self heating and its application to pulsed applications such as radar are discussed.

引用

页数：4

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