CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

被引：67
|
作者：
Peralagu, U. [1 ]
Alian, A. [1 ]
Putcha, V. [1 ]
Khaled, A. [1 ]
Rodriguez, R. [1 ]
Sibaja-Hernandez, A. [1 ]
Chang, S. [1 ,2 ,3 ]
Simoen, E. [1 ,2 ]
Zhao, S. E. [4 ]
De Jaeger, B. [1 ]
Fleetwood, D. M. [4 ]
Wambacq, P. [1 ]
Zhao, M. [1 ]
Parvais, B. [1 ,5 ]
Waldron, N. [1 ]
Collaert, N. [1 ]
机构：
[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
[2] Katholieke Univ Leuven, Leuven, Belgium
[3] Natl Chiao Tung Univ, Hsinchu, Taiwan
[4] Vanderbilt Univ, 221 Kirkland Hall, Nashville, TN 37235 USA
[5] VUB, Brussels, Belgium
来源：
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年
关键词：
D O I：
10.1109/iedm19573.2019.8993582
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (Rc) of 0.14 Omega mm for a non-Au, low thermal budget (<600 degrees C) contact scheme and a high vertical breakdown voltage (V-BD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (mu(FE)), >2000 cm(2)/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.
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页数：4
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