CMOS-compatible GaN-based devices on 200mm-Si for RF applications: Integration and Performance

被引：67

作者：

Peralagu, U. ^{[1
]}

Alian, A. ^{[1
]}

Putcha, V. ^{[1
]}

Khaled, A. ^{[1
]}

Rodriguez, R. ^{[1
]}

Sibaja-Hernandez, A. ^{[1
]}

Chang, S. ^{[1
,2
,3
]}

Simoen, E. ^{[1
,2
]}

Zhao, S. E. ^{[4
]}

De Jaeger, B. ^{[1
]}

Fleetwood, D. M. ^{[4
]}

Wambacq, P. ^{[1
]}

Zhao, M. ^{[1
]}

Parvais, B. ^{[1
,5
]}

Waldron, N. ^{[1
]}

Collaert, N. ^{[1
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Leuven, Belgium

[3] Natl Chiao Tung Univ, Hsinchu, Taiwan

[4] Vanderbilt Univ, 221 Kirkland Hall, Nashville, TN 37235 USA

[5] VUB, Brussels, Belgium

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993582

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools, and discuss the performance tradeoffs, limitations and solutions. The main highlights of process optimization include low RF transmission loss (0.15 dB/mm at 20 GHz), state-of-the-art contact resistance (Rc) of 0.14 Omega mm for a non-Au, low thermal budget (<600 degrees C) contact scheme and a high vertical breakdown voltage (V-BD) of >300 V (pre and post device processing). We show that MISHEMTs, which feature the highest field effect mobility (mu(FE)), >2000 cm(2)/V.s, and the best 1/f noise performance, have the potential to outperform the other device types in terms of device scalability for high frequency operation.

引用

页数：4

共 43 条

[21] Detailed electrical characterization of 200 mm CMOS compatible GaN/Si HEMTs down to deep cryogenic temperatures
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[22] Evaluation of Reliability and Lifetime of 650-V GaN-on-Si Power Devices Fabricated on 200-mm CMOS-Compatible Process Platform for High-Density Power Converter Application
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Jin, Shoudong
He, Chuan
Yao, Weigang
Li, Xingjun
He, Qingyuan
Pu, Xiaoqing
Su, Xiaoliang
Zou, Yanbo
Cai, Hui
Lee, Kye-Jin
Wang, Mike
Guo, Harry
Shen, Ke
Wang, Felix
Chiu, H. -C.
Chen, Larry
Marcon, Denis
Wong, Roy K. -Y.
2022 IEEE 34TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2022, : 93 - 96
[23] Integration of GaAs, GaN, and Si-CMOS on a common 200 mm Si substrate through multilayer transfer process
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Kohen, David
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[24] Monolithic integration of lattice-matched Ga(NAsP)-based laser structures on CMOS-compatible Si (001) wafers for Si-photonics applications
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[25] Hybrid III-V/Silicon Technology for Laser Integration on a 200-mm Fully CMOS-Compatible Silicon Photonics Platform
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Hassan, Karim
Adelmini, Aetitia
Ghegin, Elodie
Rodriguez, Philippe
Nemouchi, Fabrice
Brianceau, Pierre
Vermande, Elisa
Schembri, Antoine
Carrara, David
Cavalie, Pierrick
Franchin, Florent
Roure, Marie-Christine
Sanchez, Lois
Jany, Christophe
Olivier, Segolene
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[26] Integration, BEOL, and Thermal Stress Impact on CMOS-Compatible Titanium-Based Contacts for III-V Devices on a 300-mm Platform
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Dabertrand, K.
Jany, C.
Gergaud, P.
Coudurier, N.
Nemouchi, F.
Gregoire, M.
Rafhay, Q.
Rodriguez, Ph
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[28] High Performance CMOS-Compatible RF GaN-on-Silicon HEMTs With Low-Resistive and Highly-Conformal Ohmic Contacts
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[29] Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si CMOS for Future mm-Wave RF Applications
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Bader, S.
Momson, I.
Thomson, D.
Beumer, M.
Koirala, P.
Peck, J.
Oni, A.
Hoff, T.
Jordan, R.
Michaelos, T.
Nair, N.
Nordeen, P.
Vyatskikh, A.
Ban, I.
Zubair, A.
Rami, S.
Fischer, P.
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[30] CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities
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Alian, Alireza
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