Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

被引：45
|
作者：
Valentin, A. [1 ]
Raine, M. [1 ]
Sauvestre, J. -E. [1 ]
Gaillardin, M. [1 ]
Paillet, P. [1 ]
机构：
[1] CEA, DAM, DIF, F-91297 Arpajon, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 288卷
关键词：
Geant4-DNA; Energy-Loss Function; Inelastic cross-sections; Microdosimetry; Electrons; Silicon; MuElec; MONTE-CARLO-SIMULATION; MEAN FREE PATHS; LIQUID WATER; CHARGED PARTICLES; ELEMENTAL SOLIDS; TRACK-STRUCTURE; EXCITATION; ION; SPECTROSCOPY; SPECTRA;
D O I：
10.1016/j.nimb.2012.07.028
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The Energy-Loss Function (ELF) of silicon is used to calculate differential and total inelastic cross-sections of incident electrons. The model is validated in the 50 eV-50 keV incident energy range by comparing the inelastic cross-sections, stopping powers, and ranges to experimental and calculated data from the literature. It is applicable down to 16.7 eV. The cross sections are then used to simulate low-energy electron tracks in silicon with Geant4, using a similar implementation as the Geant4-DNA extension; this new Geant4 extension is called MuElec. Generation of low-energy electrons is clearly seen. The obtained ranges are consistent with experimental data. (C) 2012 Elsevier By. All rights reserved.
引用
收藏
页码：66 / 73
页数：8
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