Geant4 physics processes for microdosimetry simulation: Very low energy electromagnetic models for electrons in silicon

被引：45

作者：

Valentin, A. ^{[1
]}

Raine, M. ^{[1
]}

Sauvestre, J. -E. ^{[1
]}

Gaillardin, M. ^{[1
]}

Paillet, P. ^{[1
]}

机构：

[1] CEA, DAM, DIF, F-91297 Arpajon, France

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2012年 / 288卷

关键词：

Geant4-DNA; Energy-Loss Function; Inelastic cross-sections; Microdosimetry; Electrons; Silicon; MuElec; MONTE-CARLO-SIMULATION; MEAN FREE PATHS; LIQUID WATER; CHARGED PARTICLES; ELEMENTAL SOLIDS; TRACK-STRUCTURE; EXCITATION; ION; SPECTROSCOPY; SPECTRA;

D O I：

10.1016/j.nimb.2012.07.028

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The Energy-Loss Function (ELF) of silicon is used to calculate differential and total inelastic cross-sections of incident electrons. The model is validated in the 50 eV-50 keV incident energy range by comparing the inelastic cross-sections, stopping powers, and ranges to experimental and calculated data from the literature. It is applicable down to 16.7 eV. The cross sections are then used to simulate low-energy electron tracks in silicon with Geant4, using a similar implementation as the Geant4-DNA extension; this new Geant4 extension is called MuElec. Generation of low-energy electrons is clearly seen. The obtained ranges are consistent with experimental data. (C) 2012 Elsevier By. All rights reserved.

引用

页码：66 / 73

页数：8

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