MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

被引：6

作者：

E, Yanxiong ^{[1
]}

Hao, Zhibiao ^{[1
]}

Yu, Jiadong ^{[1
]}

Wu, Chao ^{[1
]}

Liu, Runze ^{[1
]}

Wang, Liu ^{[1
]}

Xiong, Bing ^{[1
]}

Wang, Jian ^{[1
]}

Han, Yanjun ^{[1
]}

Sun, Changzheng ^{[1
]}

Luo, Yi ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

来源：

NANOSCALE RESEARCH LETTERS | 2015年 / 10卷

基金：

中国国家自然科学基金;

关键词：

AlN nanowires; Nucleation; Crystal polarity; Molecular beam epitaxy; GAN NANOWIRES; NITRIDE; INTERFACE;

D O I：

10.1186/s11671-015-1083-0

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

By introducing an aluminization process to achieve nucleation of nanowires (NWs), spontaneous growth of AlN NWs on Si substrates has been realized by plasma-assisted molecular beam epitaxy. The AlN NWs are grown from the nuclei formed by the aluminization process, and the NW density and diameter can be controlled by the aluminization parameters. The influence of growth conditions on the morphologies of AlN NWs is carefully investigated. Island-like films are found to grow between the NWs due to poor migration ability of Al adatoms. The films are proved to be Al-polar different from the N-polar AlN NWs, which can explain the absence of newly formed NWs. Increasing the V/III ratio can efficiently suppress the growth of Al-polar AlN films.

引用

页数：7

共 50 条

[41] Plasma-assisted MBE growth of GaN on Si(111) substrates
Sobanska, M.
Klosek, K.
Zytkiewicz, Z. R.
Borysiuk, J.
Witkowski, B. S.
Lusakowska, E.
Reszka, A.
Jakiela, R.
CRYSTAL RESEARCH AND TECHNOLOGY, 2012, 47 (03) : 307 - 312
[42] MBE growth conditions for Si island formation on Ge (001) substrates
Pachinger, D.
Lichtenberger, H.
Chen, G.
Stangl, J.
Hesser, G.
Schaeffler, F.
THIN SOLID FILMS, 2008, 517 (01) : 62 - 64
[43] The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires
Reznik, R. R.
Kotlyar, K. P.
Ilkiv, I. V.
Soshnikov, I. P.
Kukushkin, S. A.
Osipov, A. V.
Nikitina, E. V.
Cirlin, G. E.
3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
[44] MBE growth and digital etch of GaSb/InAs nanowires on Si for logic applications
Dropiewski, Katherine
Tokranov, Vadim
Yakimov, Michael
Oktyabrsky, Serge
Bentley, Steven
Galatage, Rohit
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (02):
[45] Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates
Ploog, KH
Brandt, O
Yang, H
Yang, B
Trampert, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04): : 2229 - 2236
[46] MBE HgCdTe on si and GaAs substrates
He, L.
Chen, L.
Wu, Y.
Fu, X. L.
Wang, Y. Z.
Wu, J.
Yu, M. F.
Yang, J. R.
Ding, R. J.
Hu, X. N.
Li, Y. J.
Zhang, Q. Y.
JOURNAL OF CRYSTAL GROWTH, 2007, 301 : 268 - 272
[47] Nucleation and growth of GaN layers on GaAs, Si, and SiC substrates
J Vac Sci Technol B, 4 (2229):
[48] Direct growth of cubic AlN and GaN on Si(001) with plasma-assisted MBE
Ohachi, T
Kikuchi, T
Ito, Y
Takagi, R
Hogiri, M
Miyauchi, K
Wada, M
Ohnishi, Y
Fujita, K
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2589 - 2592
[49] Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport
Dubrovskii, Vladimir G.
NANOMATERIALS, 2022, 12 (07)
[50] Direct growth of AlN thin layer on (111)Si substrate by RF-MBE
Ohshima, N
Yonezu, H
Uesugi, S
Gotoh, K
Yamahira, S
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE, 1998, 512 : 405 - 410

← 1 2 3 4 5 →