Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz

被引：15

作者：

Deng, Marina ^{[1
]}

Quemerais, Thomas ^{[2
]}

Bouvot, Simon ^{[1
,2
]}

Gloria, Daniel ^{[2
]}

Chevalier, Pascal ^{[2
]}

Lepilliet, Sylvie ^{[1
]}

Danneville, Francois ^{[1
]}

Dambrine, Gilles ^{[1
]}

机构：

[1] Univ Lille, IEMN UMR CNRS 8520, Ave Poincare,CS60069, F-59652 Villeneuve Dascq, France

[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

来源：

SOLID-STATE ELECTRONICS | 2017年 / 129卷

关键词：

Device characterization; G-band; H-band; Heterojunction bipolar transistors (HBTs); Silicon-Germanium (SiGe);

D O I：

10.1016/j.sse.2016.11.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a small-signal characterization work on a recently developed 55 nm SiGe BiCMOS technology from STMicroelectronics. The SiGe HBT from a prototype BiCMOS 55 nm process was investigated up to 325 GHz. The full S-parameters from DC to 325 GHz under multiple bias conditions are presented for the first time for a SiGe HBT. A usual and simple approach for the off-wafer calibration associated to an on-wafer de-embedding procedure was used and remained valid up to 325 GHz thanks to a size reduction of the test structures. The extracted 300/325 GHz f(T)f(MAX) couple, reached at 14 mA/mu m(2) collector density and 1.2 V collector-emitter voltage, was validated up to 325 GHz. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：150 / 156

页数：7

共 50 条

[31] Two 300-GHz Wide Tuning Signal Sources in 130-nm SiGe BICMOS Process
Lu, Binqing
Li, Qin
2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019), 2019,
[32] A 37-87 GHz Continuously Tunable Signal Source in a 130 nm SiGe:C BiCMOS Technology
Bredendiek, Christian
Vogelsang, Florian
Aufinger, Klaus
Pohl, Nils
2022 17TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2022), 2022, : 276 - 279
[33] A 55 nm Triple Gate Oxide 9 Metal Layers SiGe BiCMOS Technology Featuring 320 GHz fT/370 GHz fMAX HBT and High-Q Millimeter-Wave Passives
Chevalier, P.
Avenier, G.
Ribes, G.
Montagne, A.
Canderle, E.
Celi, D.
Derrier, N.
Deglise, C.
Durand, C.
Quemerais, T.
Buczko, M.
Gloria, D.
Robin, O.
Petitdidier, S.
Campidelli, Y.
Abbate, F.
Gros-Jean, M.
Berthier, L.
Chapon, J. D.
Leverd, F.
Jenny, C.
Richard, C.
Gourhant, O.
De-Buttet, C.
Beneyton, R.
Maury, P.
Joblot, S.
Favennec, L.
Guillermet, M.
Brun, P.
Courouble, K.
Haxaire, K.
Imbert, G.
Gourvest, E.
Cossalter, J.
Saxod, O.
Tavernier, C.
Foussadier, F.
Ramadout, B.
Bianchini, R.
Julien, C.
Ney, D.
Rosa, J.
Haendler, S.
Carminati, Y.
Borot, B.
2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2014,
[34] Extraction and verification of the small-signal model for InP DHBTs in the 0.2-325 GHz frequency range
Zhou, Wenyong
Sun, Lingling
Liu, Jun
Chen, Zhanfei
Su, Guodong
Cheng, Wei
Lu, Haiyan
IEICE ELECTRONICS EXPRESS, 2018, 15 (13):
[35] A 130nm SiGe BiCMOS technology for mm-wave applications featuring HBT with fT/fMAX of 260/320 GHz
Candra, Panglijen
Jain, Vibhor
Cheng, Peng
Pekarik, John
Camillo-Castillo, R.
Gray, Peter
Kessler, Thomas
Gambino, Jeffrey
Dunn, James
Harame, David
2013 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2013, : 381 - 384
[36] NOVEL METHOD TO DETERMINE BASE RESISTANCE IN SIGE HBT FROM SMALL-SIGNAL S-PARAMETERS MEASUREMENT
Sun, Yabin
Fu, Jun
Wang, Yudong
Zhou, Wei
Li, Xiaojin
Shi, Yanling
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2017, 59 (03) : 555 - 560
[37] Small-Signal Modeling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology
Quang Huy Le
Dang Khoa Huynh
Wang, Defu
Kaempfe, Thomas
Rudolph, Matthias
PROCEEDINGS OF THE 2019 IEEE ASIA-PACIFIC MICROWAVE CONFERENCE (APMC), 2019, : 222 - 224
[38] Detecting variations of small-signal equivalent-circuit model parameters in the Si/SiGe HBT process with ANN
Taher, H
Schreurs, D
Gillon, R
Vestiel, E
van Niekerk, C
Alabadelah, A
Nauwelaers, B
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING, 2005, 15 (01) : 102 - 108
[39] Low Phase Noise and High Output Power 367 GHz and 154 GHz Signal Sources in 130 nm SiGe HBT Technology
Zeinolabedinzadeh, Saeed
Song, Peter
Kaynak, Mehmet
Kamarei, Mahmoud
Tillack, Bernd
Cressler, John D.
2014 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2014,
[40] A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS
Starke, David
Vogelsang, Florian
Bott, Jonathan
Schopfel, Jan
Bredendiek, Christian
Aufinger, Klaus
Pohl, Nils
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2024, 72 (08) : 4685 - 4700

← 1 2 3 4 5 →