A 360 GHz Fully Integrated Differential Signal Source With 106.7 GHz Continuous Tuning Range in 90 nm SiGe:C BiCMOS

被引:1
|
作者
Starke, David [1 ]
Vogelsang, Florian [1 ]
Bott, Jonathan [1 ]
Schopfel, Jan [1 ]
Bredendiek, Christian [2 ]
Aufinger, Klaus [3 ]
Pohl, Nils [1 ,2 ]
机构
[1] Ruhr Univ Bochum, Inst Integrated Syst, D-44801 Bochum, Germany
[2] Fraunhofer Inst High Frequency Phys & Radar Tech F, D-53343 Wachtberg, Germany
[3] Infineon Technol AG, D-85579 Neubiberg, Germany
关键词
B12HFC; Colpitts-Clapp; frequency doubler; frequency multiplier; frequency-modulated continuous-wave (FMCW) radar; integrated microwave circuits and systems; Lange couplers; millimeter-wave (mmWave) and terahertz components; power amplifier (PA) circuits; semiconductor sources for terahertz; SiGe heterojunction bipolar transistors (SiGe HBTs) circuits; signal generation; signal sources; silicon germanium (SiGe) BiCMOS; static frequency divider; voltage-controlled oscillator (VCO); wideband circuits; PEAK OUTPUT POWER; FMCW RADAR; MILLIMETER-WAVE; BIPOLAR VCO; AMPLIFIER; THZ; TRANSCEIVER; ARRAY; DBM;
D O I
10.1109/TMTT.2024.3356610
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Commercial frequency-modulated continuous-wave (FMCW) radar systems are well-established in the frequency range up to 100 GHz, with some exceptions operating in the D-band and above. There are multiple advantages of operating at higher frequencies, such as the use of on-chip antennas and, therefore, the omission of high-frequency substrates for frontend designs, which enables the fabrication of low-cost FR4 radar frontends. This work features a 360 GHz fully integrated signal source and breakout circuits at 90 and 180 GHz, manufactured in the 90 nm B12HFC SiGe:C BiCMOS technology. We present a 90-GHz wideband Colpitts-Clapp VCO combined with a static frequency divider for stabilization purposes, achieving a tuning range (TR) of 24.1 GHz and an output power of up to 6.43 dBm. Adding a frequency-doubling and amplification stage expands this circuit, achieving 51.7-GHz TR and up to 3.8-dBm output power. The 360 GHz signal source adds another frequency-doubling stage consisting of a wideband differential hybrid coupler for quadrature signal generation, amplifier chains, and two push-push frequency doublers, generating a pseudodifferential output signal with up to -1.8 dBm output power and a frequency TR of 106.7 GHz (29.9%).
引用
收藏
页码:4685 / 4700
页数:16
相关论文
共 50 条
  • [1] A fully integrated 60 GHz LNA in SiGe:C BiCMOS technology
    Sun, Y
    Borngräber, J
    Herzel, F
    Winkler, W
    PROCEEDINGS OF THE 2005 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2005, : 14 - 17
  • [2] A Fully Integrated 60 GHz SiGe BiCMOS Mixer
    Lee, Sang-Heung
    Lee, Ja-Yol
    Kim, Haecheon
    2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 410 - 413
  • [3] A Signal Source in J-Band with 237-287 GHz Tuning Range in a 130-nm SiGe BiCMOS Process
    Jamal, Farabi Ibne
    Mausole, T.
    Yazici, M.
    Vater, F.
    Cartes, C.
    Scholz, R.
    2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024, 2024, : 114 - 117
  • [4] A Fully Integrated 320 GHz Coherent Imaging Transceiver in 130 nm SiGe BiCMOS
    Jiang, Chen
    Mostajeran, Ali
    Han, Ruonan
    Emadi, Mohammad
    Sherry, Hani
    Cathelin, Andreia
    Afshari, Ehsan
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2016, 51 (11) : 2596 - 2609
  • [5] A fully integrated low-power low-jitter clock synthesizer with 1.2 GHz tuning range in SiGe:C BiCMOS
    Gustat, H
    Herzel, F
    Shevchenko, I
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2005, 8 (1-3) : 451 - 458
  • [6] An Integrated 122 GHz Differential Frequency Doubler with 37 GHz Bandwidth in 130 nm SiGe BiCMOS Technology
    Ergintav, Arzu
    Herzel, Frank
    Aber, Johannes Borngr
    Kissinger, Dietmar
    Ng, Herman Jalli
    2017 IEEE MTT-S INTERNATIONAL CONFERENCE ON MICROWAVES FOR INTELLIGENT MOBILITY (ICMIM), 2017, : 53 - 56
  • [7] Fully Integrated Multimode Orbital Angular Momentum Wave Generation at 360 GHz Using SiGe BiCMOS
    Sun, Wei
    Thomas, Sidharth
    Babakhani, Aydin
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2025,
  • [8] A 37-87 GHz Continuously Tunable Signal Source in a 130 nm SiGe:C BiCMOS Technology
    Bredendiek, Christian
    Vogelsang, Florian
    Aufinger, Klaus
    Pohl, Nils
    2022 17TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2022), 2022, : 276 - 279
  • [9] A SiGe Based 0.48 THz Signal Source with 45 GHz Tuning Range
    Wittemeier, Jonathan
    Vogelsang, Florian
    Starke, David
    Ruecker, Holger
    Pohl, Nils
    2021 51ST EUROPEAN MICROWAVE CONFERENCE (EUMC), 2021, : 869 - 872
  • [10] A 30.5 GHz Fully Integrated Frequency Synthesizer in SiGe BiCMOS for 61 GHz and 122 GHz Radar Applications
    Kucharski, Maciej
    Ergintav, Arzu
    Herzel, Frank
    Kissinger, Dietmar
    Ng, Herman Jalli
    2017 IEEE MTT-S INTERNATIONAL CONFERENCE ON MICROWAVES FOR INTELLIGENT MOBILITY (ICMIM), 2017, : 57 - 60