Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

被引：55
|
作者：
Lee, Jung-Kyu [1 ,2 ]
Jung, Sunghun [1 ,2 ]
Park, Jinwon [3 ]
Chung, Sung-Woong [3 ]
Roh, Jae Sung [3 ]
Hong, Sung-Joo [3 ]
Cho, Il Hwan [4 ]
Kwon, Hyuck-In [5 ]
Park, Chan Hyeong [6 ]
Park, Byung-Gook [1 ,2 ]
Lee, Jong-Ho [1 ,2 ]
机构：
[1] Seoul Natl Univ, Sch EECS, Seoul 151742, South Korea
[2] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[3] SK Hynix Inc, R&D Div, Kyonggi Do 467701, South Korea
[4] Myongji Univ, Dept Elect Engn, Yongin 449728, Kyeonggido, South Korea
[5] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
[6] Kwangwoon Univ, Dept Elect & Commun Engn, Seoul 139701, South Korea
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期
关键词：
FILMS;
D O I：
10.1063/1.4751248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751248]
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页数：4
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