Accurate analysis of conduction and resistive-switching mechanisms in double-layered resistive-switching memory devices

被引：55
|
作者：
Lee, Jung-Kyu [1 ,2 ]
Jung, Sunghun [1 ,2 ]
Park, Jinwon [3 ]
Chung, Sung-Woong [3 ]
Roh, Jae Sung [3 ]
Hong, Sung-Joo [3 ]
Cho, Il Hwan [4 ]
Kwon, Hyuck-In [5 ]
Park, Chan Hyeong [6 ]
Park, Byung-Gook [1 ,2 ]
Lee, Jong-Ho [1 ,2 ]
机构：
[1] Seoul Natl Univ, Sch EECS, Seoul 151742, South Korea
[2] Seoul Natl Univ, ISRC, Seoul 151742, South Korea
[3] SK Hynix Inc, R&D Div, Kyonggi Do 467701, South Korea
[4] Myongji Univ, Dept Elect Engn, Yongin 449728, Kyeonggido, South Korea
[5] Chung Ang Univ, Sch Elect & Elect Engn, Seoul 156756, South Korea
[6] Kwangwoon Univ, Dept Elect & Commun Engn, Seoul 139701, South Korea
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 10期
关键词：
FILMS;
D O I：
10.1063/1.4751248
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Resistive-switching and current conduction mechanisms have been studied in TiN/Ti/TiOx/HfOx/TiN resistive-switching random access memories (RRAMs). From I-V characteristics and temperature measurement, thermionic emission is found to be the most appropriate mechanism representing the dominant current conduction in all the bias regions and resistance states. Low-frequency noise power spectrum is measured to analyze accurately the conduction mechanism, which corroborates the thermionic-emission. Also, using the migration of oxygen ions depending on the polarity of the applied field, we propose the resistive-switching model of a double-layered RRAM to explain the unique resistive-switching characteristics. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4751248]
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Analytical modeling electrical conduction in resistive-switching memory through current-limiting-friendly combination frameworks
    Wang, Qishen
    Periasamy, Karthekeyan
    Fu, Yi
    Chan, Ya-Ting
    Tan, Cher Ming
    Bajalovic, Natasa
    Wang, Jer-Chyi
    Loke, Desmond K.
    AIP ADVANCES, 2020, 10 (08)
  • [32] Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide
    Wang, Yongshun
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (02): : 364 - 368
  • [33] Analog resistive-switching property of Ni/TiOx/W structure
    Liu, Chih-Yi
    Liu, Shih-Kun
    Huang, Chung-Chia
    Lin, Chao-Cheng
    Lai, Chun-Hung
    MODERN PHYSICS LETTERS B, 2022, 36 (18):
  • [34] Conduction mechanisms and reliability characteristics in MgO resistive switching memory devices
    Chiu, Fu-Chien
    Feng, Jun-Jea
    Shih, Wen-Chieh
    Cheng, Po-Yueh
    Huang, Chih-Yao
    2011 18TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2011,
  • [35] Hardware implementation of associative memory characteristics with analogue-type resistive-switching device
    Moon, Kibong
    Park, Sangsu
    Jang, Junwoo
    Lee, Daeseok
    Woo, Jiyong
    Cha, Euijun
    Lee, Sangheon
    Park, Jaesung
    Song, Jeonghwan
    Koo, Yunmo
    Hwang, Hyunsang
    NANOTECHNOLOGY, 2014, 25 (49)
  • [36] Resistive-Switching Memory Effect of Hybrid Structures with Polyimide and SnO2 Nanocrystals
    Lee, Dong Uk
    Kim, Seon Pil
    Kim, Eun Kyu
    Cho, Won-Ju
    Kim, Young-Ho
    Im, Hyunsik
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2012, 12 (07) : 5449 - 5452
  • [37] Transition from rectification to resistive-switching in Ti/MgF2/Pt memory
    Sun, Yi
    Wang, Chao
    Xu, Hui
    Song, Bing
    Li, Nan
    Li, Qingjiang
    Liu, Sen
    AIP ADVANCES, 2019, 9 (10)
  • [38] A Parallel Circuit Model for Multi-State Resistive-Switching Random Access Memory
    Chen, Albert B. K.
    Choi, Byung Joon
    Yang, Xiang
    Chen, I. -Wei
    ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (03) : 546 - 554
  • [39] Electrical Characteristics of CMOS-Compatible SiOx-Based Resistive-Switching Devices
    Koryazhkina, Maria N.
    Filatov, Dmitry O.
    Tikhov, Stanislav V.
    Belov, Alexey I.
    Serov, Dmitry A.
    Kryukov, Ruslan N.
    Zubkov, Sergey Yu.
    Vorontsov, Vladislav A.
    Pavlov, Dmitry A.
    Gryaznov, Evgeny G.
    Orlova, Elena S.
    Shchanikov, Sergey A.
    Mikhaylov, Alexey N.
    Kim, Sungjun
    NANOMATERIALS, 2023, 13 (14)
  • [40] Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
    Ambrogio, Stefano
    Balatti, Simone
    Cubeta, Antonio
    Calderoni, Alessandro
    Ramaswamy, Nirmal
    Ielmini, Daniele
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (08) : 2912 - 2919
12345