A Two-Step Electrical Degradation Behavior in α-InGaZnO Thin-Film Transistor

被引：2

作者：

Pan, Tung-Ming ^{[1
]}

Chen, Fa-Hsyang ^{[1
]}

Chen, Ching-Hung ^{[1
]}

Lin, Ching-Chang

Cheng, Chieh

Ko, Fu-Hsiang

Lin, Wu-Hsiung

Chen, Po-Hsueh

Her, Jim-Long

Matsud, Yasuhiro H.

机构：

[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11 | 2013年 / 58卷 / 07期

关键词：

D O I：

10.1149/05807.0299ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (alpha-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of alpha-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the alpha-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.

引用

页码：299 / 302

页数：4

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