A Two-Step Electrical Degradation Behavior in α-InGaZnO Thin-Film Transistor

被引：2
|
作者：
Pan, Tung-Ming [1 ]
Chen, Fa-Hsyang [1 ]
Chen, Ching-Hung [1 ]
Lin, Ching-Chang
Cheng, Chieh
Ko, Fu-Hsiang
Lin, Wu-Hsiung
Chen, Po-Hsueh
Her, Jim-Long
Matsud, Yasuhiro H.
机构：
[1] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan
来源：
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 11 | 2013年 / 58卷 / 07期
关键词：
D O I：
10.1149/05807.0299ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this study, we explored the threshold voltage instability behavior in amorphous indium-gallium-zinc oxide (alpha-IGZO) thin-film transistor (TFT). A tow-step electrical degradation behavior of alpha-IGZO TFT was found under gate-bias stress. A usual small positive shift followed by a special negative shift of threshold voltage is characterized in the alpha-IGZO TFT. We suggest that the positive shift of the threshold voltage is because of charge trapping in the gate dielectric and/or at the channel/dielectric interface, while the negative shift of threshold voltage may be attributed to electric field induced extra electron carriers from H2O molecules in the back channel protective layer.
引用
收藏
页码：299 / 302
页数：4
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