Photovoltaic Hg1-xCdxTe (MCT) detectors for infrared radiation

被引：0
|
作者：
Aguirre, M
Canepa, H
Heredia, E
Serravalle, O
DeReca, NEW
机构：
来源：
ANALES DE LA ASOCIACION QUIMICA ARGENTINA | 1996年 / 84卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
P-type Hg1-xCdxTe layers were growth at PRINSO (Programa de Investigaciones en Solidos) by ISOVPE (Isothermal Vapor Phase Epitaxy) technique. Argon implantation was carried our to create a junction. Backscattering Spectrometry, Channeling and electrical measurements were performed before and after implantation. Diodes were manufactured and their photovoltaic properties were evaluated by measuring I-V characteristics and the spectral response at 77 K.
引用
收藏
页码：67 / 72
页数：6
相关论文
共 50 条
  • [31] FAR-INFRARED DETECTION WITH HG1-XCDXTE
    KIMMITT, MF
    LOPEZ, GC
    GILES, JC
    TAKAI, M
    ROSER, HP
    MCGUCKIN, BT
    BLACK, A
    INFRARED PHYSICS, 1985, 25 (06): : 767 - 778
  • [32] Numerical simulation of two-color infrared Hg1-xCdxTe detectors for optimizing design
    Xu, Xiang Yan
    Ye, Zhen Hua
    Lu, Wei
    2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2, 2007, : 727 - 728
  • [33] FAR INFRARED RECOMBINATION RADIATION FROM N-TYPE HG1-XCDXTE
    NIMTZ, G
    TYSSEN, E
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 38 (02): : K171 - K173
  • [34] Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote-sensing applications
    Wijewarnasuriya, PS
    Zandian, M
    Phillips, J
    Edwall, D
    Dewames, RE
    Hildebrandt, G
    Bajaj, J
    Arias, JM
    D'Souza, AI
    Moore, F
    JOURNAL OF ELECTRONIC MATERIALS, 2002, 31 (07) : 726 - 731
  • [35] Validation of models for subgrain growth in Hg1-xCdxTe (MCT) by thermal annealing
    Perez, LV
    Trigubo, AB
    deReca, NEW
    JOURNAL OF CRYSTAL GROWTH, 1996, 167 (1-2) : 87 - 92
  • [36] Growth and physics of Hg1-xCdxTe and type IIIHgTe/Hg1-xCdxTe heterostructures
    Becker, CR
    Zhang, XC
    Ortner, K
    Schmidt, J
    Pfeuffer-Jeschke, A
    Latussek, V
    Landwehr, G
    PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS, 2001, 2 : 61 - 64
  • [37] Vacancies in Hg1-xCdxTe
    Chandra, D
    Schaake, HF
    Tregilgas, JH
    Aqariden, F
    Kinch, MA
    Syllaois, AJ
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (06) : 729 - 731
  • [38] The relationship between resistivity and temperature for Hg1-xCdxTe photoconductive detectors
    Gui, YS
    Zheng, GZ
    Zhang, XC
    Guo, SL
    Chu, JH
    Cai, Y
    THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 1998, 3175 : 391 - 394
  • [39] COMPOSITIONAL DEPENDENCE OF INFRARED PHONON PARAMETERS FOR HG1-XCDXTE
    RAJAVEL, D
    PERKOWITZ, S
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (01) : 25 - 27
  • [40] FOURIER-TRANSFORM INFRARED PHOTOLUMINESCENCE OF HG1-XCDXTE
    FUCHS, F
    LUSSON, A
    KOIDL, P
    TRIBOULET, R
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 722 - 726
12345