Photovoltaic Hg1-xCdxTe (MCT) detectors for infrared radiation

被引：0
|
作者：
Aguirre, M
Canepa, H
Heredia, E
Serravalle, O
DeReca, NEW
机构：
来源：
ANALES DE LA ASOCIACION QUIMICA ARGENTINA | 1996年 / 84卷 / 01期
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中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
P-type Hg1-xCdxTe layers were growth at PRINSO (Programa de Investigaciones en Solidos) by ISOVPE (Isothermal Vapor Phase Epitaxy) technique. Argon implantation was carried our to create a junction. Backscattering Spectrometry, Channeling and electrical measurements were performed before and after implantation. Diodes were manufactured and their photovoltaic properties were evaluated by measuring I-V characteristics and the spectral response at 77 K.
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页码：67 / 72
页数：6
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