Fabrication of ZnS0.6Se0.4 Nanowires Using ZnS Nanowires as an In-situ Template

被引：1
|
作者：
Zhong, Ping [1 ,2 ]
Wang, Chunrui [1 ,2 ]
Xu, Jing [1 ,2 ]
Wang, Hongyun [1 ,2 ]
Xu, Xiaofeng [1 ,2 ]
Xin, Huaizhong [1 ,2 ]
Chen, Xiaoshuang [3 ]
机构：
[1] Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China
[2] Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China
[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期
基金：
中国国家自然科学基金;
关键词：
INDIUM-PHOSPHIDE NANOWIRES; MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE PROPERTIES; LASER-DIODES; LUMINESCENCE; EPILAYERS; NANORODS;
D O I：
10.1143/JJAP.51.105001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Single-crystalline ZnS0.6Se0.4 was synthesized by thermal evaporation without a metallic catalyst. The as-prepared ZnS0.6Se0.4 nanowires with a rough surface and a larger diameter were in contrast to the as-prepared ZnS nanowires. The growth mechanism for ZnS0.6Se0.4ZnS nanowires appears to be reasonably explained by the vapor-solid growth mechanism involved in ZnS nanowires, which serve as in-situ source templates. The cathodoluminescence properties of ZnS0.6Se0.4 reveal a broad emission band. The emission band of ZnS0.6Se0.4 nanowires exhibits a redshift in comparison with that of ZnS nanowires. (C) 2012 The Japan Society of Applied Physics
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页数：3
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