Fabrication of ZnS0.6Se0.4 Nanowires Using ZnS Nanowires as an In-situ Template

被引：1

作者：

Zhong, Ping ^{[1
,2
]}

Wang, Chunrui ^{[1
,2
]}

Xu, Jing ^{[1
,2
]}

Wang, Hongyun ^{[1
,2
]}

Xu, Xiaofeng ^{[1
,2
]}

Xin, Huaizhong ^{[1
,2
]}

Chen, Xiaoshuang ^{[3
]}

机构：

[1] Donghua Univ, Dept Appl Phys, Shanghai 201620, Peoples R China

[2] Donghua Univ, State Key Lab Modificat Chem Fibers & Polymer Mat, Shanghai 201620, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期

基金：

中国国家自然科学基金;

关键词：

INDIUM-PHOSPHIDE NANOWIRES; MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE PROPERTIES; LASER-DIODES; LUMINESCENCE; EPILAYERS; NANORODS;

D O I：

10.1143/JJAP.51.105001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single-crystalline ZnS0.6Se0.4 was synthesized by thermal evaporation without a metallic catalyst. The as-prepared ZnS0.6Se0.4 nanowires with a rough surface and a larger diameter were in contrast to the as-prepared ZnS nanowires. The growth mechanism for ZnS0.6Se0.4ZnS nanowires appears to be reasonably explained by the vapor-solid growth mechanism involved in ZnS nanowires, which serve as in-situ source templates. The cathodoluminescence properties of ZnS0.6Se0.4 reveal a broad emission band. The emission band of ZnS0.6Se0.4 nanowires exhibits a redshift in comparison with that of ZnS nanowires. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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