Effect of capping layers on activation of Be/As-implanted semi-insulating InP:Fe

被引：0
|
作者：
Lee, D [1 ]
Jeong, J [1 ]
机构：
[1] KOREA UNIV,DEPT RADIO ENGN,SUNGBUK KU,SEOUL 136701,SOUTH KOREA
来源：
APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 03期
关键词：
D O I：
10.1063/1.119544
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Be/As-coimplanted semi-insulating InP:Fe samples have been activated by rapid thermal annealing using two different capping layers to protect the surface during activation. Activated samples are investigated using Hall measurements, transmission electron microscopy, and secondary ion mass spectrometry. It is found that borosilicate glass capping results in more abrupt Be profiles as compared with aluminum oxide. Aluminum oxide capped samples show better electrical properties. However, an electrically dead layer and dislocation loop at the surface are observed in aluminum oxide capped samples. These results can be related to stress in the capped films during the activation process. (C) 1997 American Institute of Physics.
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页码：383 / 385
页数：3
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