Modeling of Tunnel Field Effect Transistor - the impact of construction parameters

被引：0
|
作者：
Wisniewski, Piotr [1 ]
Majkusiak, Bogdan [1 ]
机构：
[1] Warsaw Univ Technol, Inst Microelect & Optoelect, Koszykowa 75, PL-00662 Warsaw, Poland
来源：
ELECTRON TECHNOLOGY CONFERENCE 2016 | 2016年 / 10175卷
关键词：
semiconductor devices; tunnel transistor; interband tunneling;
D O I：
10.1117/12.2261752
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of the work is to present a theoretical model of tunnel field effect transistor and to investigate the influence of the TFET's construction parameters on the current-voltage characteristics. The solution to the problem of electrostatics in the structure is based on the numerical solution of two-dimensional Poisson equation and the electron and hole continuity equations. The tunneling process has been taken into account by a non-local interband generation model. Output and transfer characteristics of the double gate TFET were generated.
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页数：9
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